STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Serija
STripFET H7
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Plotis
9.35mm
Minimali darbinė temperatūra
-55 °C
Aukštis
4.6mm
Produkto aprašymas
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 66,50
€ 2,66 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 80,46
€ 3,219 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
€ 66,50
€ 2,66 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 80,46
€ 3,219 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 45 | € 2,66 | € 13,30 |
| 50 - 120 | € 2,422 | € 12,11 |
| 125 - 245 | € 2,185 | € 10,92 |
| 250+ | € 2,042 | € 10,21 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Serija
STripFET H7
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Plotis
9.35mm
Minimali darbinė temperatūra
-55 °C
Aukštis
4.6mm
Produkto aprašymas
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products