Dual P-Channel MOSFET, 9 A, 30 V, 8-Pin SOP ROHM SH8J66TB1

RS kodas: 177-6665Gamintojas: ROHMGamintojo kodas: SH8J66TB1
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Serija

SH8J66

Pakuotės tipas

SOP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

18.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.2mm

Typical Gate Charge @ Vgs

35 nC @ 5 V

Plotis

4.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.6mm

Kilmės šalis

Thailand

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€ 3,36

Each (In a Pack of 5) (be PVM)

€ 4,066

Each (In a Pack of 5) (su PVM)

Dual P-Channel MOSFET, 9 A, 30 V, 8-Pin SOP ROHM SH8J66TB1
sticker-462

€ 3,36

Each (In a Pack of 5) (be PVM)

€ 4,066

Each (In a Pack of 5) (su PVM)

Dual P-Channel MOSFET, 9 A, 30 V, 8-Pin SOP ROHM SH8J66TB1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 3,36€ 16,80
50 - 95€ 3,045€ 15,22
100 - 245€ 2,73€ 13,65
250 - 995€ 2,52€ 12,60
1000+€ 2,362€ 11,81

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Serija

SH8J66

Pakuotės tipas

SOP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

18.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.2mm

Typical Gate Charge @ Vgs

35 nC @ 5 V

Plotis

4.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.6mm

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more