Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1GOS

RS kodas: 195-2670Gamintojas: onsemiGamintojo kodas: NVMFD6H840NLWFT1G
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Techniniai dokumentai

Specifikacijos

Channel Mode

Enhancement

Automotive Standard

AEC-Q101

Channel Type

N

Number of Elements per Chip

2

Transistor Configuration

Dual

Minimali darbinė temperatūra

-55 °C

Kaiščių skaičius

8

Forward Diode Voltage

1.2V

Tvirtinimo tipas

Surface Mount

Minimum Gate Threshold Voltage

1.2V

Maximum Gate Threshold Voltage

2V

Maksimali darbinė temperatūra

+175 °C

Maximum Drain Source Voltage

80 V

Maximum Gate Source Voltage

±20 V

Aukštis

1.05mm

Maximum Power Dissipation

3.1 W

Plotis

5.1mm

Ilgis

6.1mm

Maximum Continuous Drain Current

74 A

Pakuotės tipas

DFN

Maximum Drain Source Resistance

8.8 mΩ

Batteries

3 x AAA Battery

Typical Gate Charge @ Vgs

32 nC @ 10 V

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 1,378

Each (On a Reel of 1500) (be PVM)

€ 1,667

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1GOS

1500

Galima įsigyti kartotiną kiekį 1500
1500€ 2 066,25
3000€ 4 132,50
4500€ 6 198,75
6000€ 8 265,00
7500€ 10 331,25
9000€ 12 397,50
10500€ 14 463,75
12000€ 16 530,00
13500€ 18 596,25
15000€ 20 662,50
16500€ 22 728,75
18000€ 24 795,00
19500€ 26 861,25
21000€ 28 927,50
22500€ 30 993,75

€ 1,378

Each (On a Reel of 1500) (be PVM)

€ 1,667

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1GOS
Sandėlio informacija laikinai nepasiekiama.

1500

Galima įsigyti kartotiną kiekį 1500
1500€ 2 066,25
3000€ 4 132,50
4500€ 6 198,75
6000€ 8 265,00
7500€ 10 331,25
9000€ 12 397,50
10500€ 14 463,75
12000€ 16 530,00
13500€ 18 596,25
15000€ 20 662,50
16500€ 22 728,75
18000€ 24 795,00
19500€ 26 861,25
21000€ 28 927,50
22500€ 30 993,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Mode

Enhancement

Automotive Standard

AEC-Q101

Channel Type

N

Number of Elements per Chip

2

Transistor Configuration

Dual

Minimali darbinė temperatūra

-55 °C

Kaiščių skaičius

8

Forward Diode Voltage

1.2V

Tvirtinimo tipas

Surface Mount

Minimum Gate Threshold Voltage

1.2V

Maximum Gate Threshold Voltage

2V

Maksimali darbinė temperatūra

+175 °C

Maximum Drain Source Voltage

80 V

Maximum Gate Source Voltage

±20 V

Aukštis

1.05mm

Maximum Power Dissipation

3.1 W

Plotis

5.1mm

Ilgis

6.1mm

Maximum Continuous Drain Current

74 A

Pakuotės tipas

DFN

Maximum Drain Source Resistance

8.8 mΩ

Batteries

3 x AAA Battery

Typical Gate Charge @ Vgs

32 nC @ 10 V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more