onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK NVD5C464NT4G

RS kodas: 172-3318Gamintojas: onsemiGamintojo kodas: NVD5C464NT4G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

40 V

Serija

NVD5C464N

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Ilgis

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Plotis

6.22mm

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Aukštis

2.25mm

Minimali darbinė temperatūra

-55 °C

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€ 1 867,50

€ 0,747 Each (On a Reel of 2500) (be PVM)

€ 2 259,68

€ 0,904 Each (On a Reel of 2500) (su PVM)

onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK NVD5C464NT4G
sticker-462

€ 1 867,50

€ 0,747 Each (On a Reel of 2500) (be PVM)

€ 2 259,68

€ 0,904 Each (On a Reel of 2500) (su PVM)

onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK NVD5C464NT4G

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

40 V

Serija

NVD5C464N

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Ilgis

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Plotis

6.22mm

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Aukštis

2.25mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more