Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 0,092
Each (In a Pack of 50) (be PVM)
€ 0,111
Each (In a Pack of 50) (su PVM)
Standartas
50
€ 0,092
Each (In a Pack of 50) (be PVM)
€ 0,111
Each (In a Pack of 50) (su PVM)
Standartas
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 50 - 100 | € 0,092 | € 4,62 |
| 150 - 250 | € 0,043 | € 2,15 |
| 300 - 550 | € 0,039 | € 1,94 |
| 600 - 1150 | € 0,038 | € 1,89 |
| 1200+ | € 0,038 | € 1,89 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products