Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,381
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,461
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
25
€ 0,381
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,461
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
25
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Juosta |
---|---|---|
25 - 100 | € 0,381 | € 9,53 |
125 - 225 | € 0,362 | € 9,06 |
250 - 600 | € 0,342 | € 8,56 |
625 - 1225 | € 0,326 | € 8,14 |
1250+ | € 0,313 | € 7,82 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.