Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Plotis
1.35mm
Number of Elements per Chip
2
Transistor Material
Si
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,136
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,165
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
Standartas
20
€ 0,136
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,165
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
Standartas
20
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Plotis
1.35mm
Number of Elements per Chip
2
Transistor Material
Si
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.