Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G

RS kodas: 163-1110Gamintojas: onsemiGamintojo kodas: NTHD4102PT1G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.7mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,36

Each (On a Reel of 3000) (be PVM)

€ 0,436

Each (On a Reel of 3000) (su PVM)

Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G
sticker-462

€ 0,36

Each (On a Reel of 3000) (be PVM)

€ 0,436

Each (On a Reel of 3000) (su PVM)

Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.7mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more