N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-75 onsemi NTA4153NT1G

RS kodas: 773-7872Gamintojas: onsemiGamintojo kodas: NTA4153NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SC-75

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

0.8mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Number of Elements per Chip

1

Plotis

1.6mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Produkto aprašymas

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,319

Each (In a Pack of 10) (be PVM)

€ 0,386

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-75 onsemi NTA4153NT1G
Pasirinkite pakuotės tipą
sticker-462

€ 0,319

Each (In a Pack of 10) (be PVM)

€ 0,386

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-75 onsemi NTA4153NT1G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,319€ 3,19
100 - 190€ 0,22€ 2,20
200 - 740€ 0,139€ 1,39
750 - 1490€ 0,122€ 1,22
1500+€ 0,105€ 1,05

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SC-75

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

0.8mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Number of Elements per Chip

1

Plotis

1.6mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Produkto aprašymas

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more