onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23

RS kodas: 761-3684Gamintojas: onsemiGamintojo kodas: MMBFJ112
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Žiūrėti viską JFET konstrukcija

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 5mA

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23

Kaiščių skaičius

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Matmenys

2.92 x 1.3 x 0.93mm

Minimali darbinė temperatūra

-55 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.92mm

Aukštis

0.93mm

Plotis

1.3mm

Kilmės šalis

China

Produkto aprašymas

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0,249

Each (In a Pack of 25) (be PVM)

€ 0,301

Each (In a Pack of 25) (su PVM)

onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23
Pasirinkite pakuotės tipą
sticker-462

€ 0,249

Each (In a Pack of 25) (be PVM)

€ 0,301

Each (In a Pack of 25) (su PVM)

onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 75€ 0,249€ 6,22
100 - 225€ 0,215€ 5,37
250 - 475€ 0,186€ 4,66
500 - 975€ 0,163€ 4,08
1000+€ 0,148€ 3,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 5mA

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23

Kaiščių skaičius

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Matmenys

2.92 x 1.3 x 0.93mm

Minimali darbinė temperatūra

-55 °C

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.92mm

Aukštis

0.93mm

Plotis

1.3mm

Kilmės šalis

China

Produkto aprašymas

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more