Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
592 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Ilgis
15.87mm
Typical Gate Charge @ Vgs
163 nC @ 10 V
Plotis
4.82mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
20.82mm
Serija
SuperFET II
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 15,435
Each (In a Tube of 30) (be PVM)
€ 18,676
Each (In a Tube of 30) (su PVM)
30
€ 15,435
Each (In a Tube of 30) (be PVM)
€ 18,676
Each (In a Tube of 30) (su PVM)
30
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
592 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Ilgis
15.87mm
Typical Gate Charge @ Vgs
163 nC @ 10 V
Plotis
4.82mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
20.82mm
Serija
SuperFET II
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.