Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155

RS kodas: 146-4096Gamintojas: ON SemiconductorGamintojo kodas: FCH040N65S3-F155
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Serija

SuperFET III

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Maksimali darbinė temperatūra

+150 °C

Ilgis

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Plotis

5.3mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Aukštis

21.08mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 10,07

už 1 vnt. (be PVM)

€ 12,18

už 1 vnt. (su PVM)

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155
sticker-462

€ 10,07

už 1 vnt. (be PVM)

€ 12,18

už 1 vnt. (su PVM)

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 24€ 10,07
25 - 49€ 9,22
50 - 224€ 8,55
225+€ 7,88

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Serija

SuperFET III

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Maksimali darbinė temperatūra

+150 °C

Ilgis

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Plotis

5.3mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Aukštis

21.08mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more