onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3

RS kodas: 172-3418Gamintojas: onsemiGamintojo kodas: FCB070N65S3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

9.65mm

Ilgis

10.67mm

Typical Gate Charge @ Vgs

78 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

4.83mm

Kilmės šalis

China

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€ 6 400,00

€ 4,00 Each (On a Reel of 1600) (be PVM)

€ 7 744,00

€ 4,84 Each (On a Reel of 1600) (su PVM)

onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3
sticker-462

€ 6 400,00

€ 4,00 Each (On a Reel of 1600) (be PVM)

€ 7 744,00

€ 4,84 Each (On a Reel of 1600) (su PVM)

onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

9.65mm

Ilgis

10.67mm

Typical Gate Charge @ Vgs

78 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

4.83mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more