Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V dc
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
3.04 x 2.64 x 1.11mm
Produkto aprašymas
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,014
Each (On a Reel of 10000) (be PVM)
€ 0,017
Each (On a Reel of 10000) (su PVM)
10000
€ 0,014
Each (On a Reel of 10000) (be PVM)
€ 0,017
Each (On a Reel of 10000) (su PVM)
10000
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V dc
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
3.04 x 2.64 x 1.11mm
Produkto aprašymas
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.