Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Pakuotės tipas
TO-92
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
4.58 x 3.86 x 4.58mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,07
Each (In a Bag of 1000) (be PVM)
€ 0,085
Each (In a Bag of 1000) (su PVM)
1000
€ 0,07
Each (In a Bag of 1000) (be PVM)
€ 0,085
Each (In a Bag of 1000) (su PVM)
1000
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Maišas |
---|---|---|
1000 - 2000 | € 0,07 | € 70,35 |
3000+ | € 0,055 | € 54,60 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Pakuotės tipas
TO-92
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
4.58 x 3.86 x 4.58mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.