Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
40 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.73 x 6.22 x 2.39mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 0,492
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,595
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
€ 0,492
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,595
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
40 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.73 x 6.22 x 2.39mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.