N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138PW,115
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,028
Each (On a Reel of 100) (be PVM)
€ 0,034
Each (On a Reel of 100) (su PVM)
Standartas
100
€ 0,028
Each (On a Reel of 100) (be PVM)
€ 0,034
Each (On a Reel of 100) (su PVM)
Standartas
100
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products