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Microchip N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G

RS kodas: 177-9588Gamintojas: MicrochipGamintojo kodas: 2N7000-G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Serija

2N7000

Pakuotės tipas

TO-92

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Plotis

4.06mm

Ilgis

5.08mm

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.85V

Aukštis

5.33mm

Kilmės šalis

Taiwan, Province Of China

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Sandėlio informacija laikinai nepasiekiama.

€ 371,45

€ 0,371 Each (In a Bag of 1000) (be PVM)

€ 449,45

€ 0,449 Each (In a Bag of 1000) (su PVM)

Microchip N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G
sticker-462

€ 371,45

€ 0,371 Each (In a Bag of 1000) (be PVM)

€ 449,45

€ 0,449 Each (In a Bag of 1000) (su PVM)

Microchip N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Microchip

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Serija

2N7000

Pakuotės tipas

TO-92

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Plotis

4.06mm

Ilgis

5.08mm

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.85V

Aukštis

5.33mm

Kilmės šalis

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more