N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip MDF16N50GTH

RS kodas: 871-4921PGamintojas: MagnaChipGamintojo kodas: MDF16N50GTH
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

550 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Plotis

4.93mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

34.9 nC @ 10 V

Aukštis

16.13mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Kilmės šalis

Korea, Republic Of

Produkto aprašymas

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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Patikrinkite dar kartą.

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€ 0,95

Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 1,15

Už kiekviena vnt. (tiekiama tuboje) (su PVM)

N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip MDF16N50GTH
Pasirinkite pakuotės tipą
sticker-462

€ 0,95

Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 1,15

Už kiekviena vnt. (tiekiama tuboje) (su PVM)

N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip MDF16N50GTH
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

550 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Plotis

4.93mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.71mm

Typical Gate Charge @ Vgs

34.9 nC @ 10 V

Aukštis

16.13mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Kilmės šalis

Korea, Republic Of

Produkto aprašymas

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more