N-Channel MOSFET Transistor, 56 A, 230 V, 3-Pin TO-220AB International Rectifier IRFB4233PBF
Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
230 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
370 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.66mm
Plotis
4.82mm
Serija
HEXFET
Aukštis
9.02mm
Minimali darbinė temperatūra
-40 °C
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P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
230 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
370 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.66mm
Plotis
4.82mm
Serija
HEXFET
Aukštis
9.02mm
Minimali darbinė temperatūra
-40 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products