P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

RS kodas: 753-3166Gamintojas: InfineonGamintojo kodas: SPB80P06P G
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Serija

SIPMOS®

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

115 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.31mm

Minimali darbinė temperatūra

-55 °C

Aukštis

4.57mm

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Patikrinkite dar kartą.

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€ 3,85

€ 3,85 už 1 vnt. (be PVM)

€ 4,66

€ 4,66 už 1 vnt. (su PVM)

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 1.

Gamyba -

Galima įsigyti kartotiną kiekį 1.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

1

Galima įsigyti kartotiną kiekį 1
1€ 3,85
2€ 7,70
3€ 11,54
4€ 15,39
5€ 19,24
6€ 23,08
7€ 26,93
8€ 30,78
9€ 34,63
10€ 35,15
11€ 38,66
12€ 42,18
13€ 45,70
14€ 49,21
15€ 52,72
sticker-462

€ 3,85

€ 3,85 už 1 vnt. (be PVM)

€ 4,66

€ 4,66 už 1 vnt. (su PVM)

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 1.

Gamyba -

Galima įsigyti kartotiną kiekį 1.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

1

Galima įsigyti kartotiną kiekį 1
1€ 3,85
2€ 7,70
3€ 11,54
4€ 15,39
5€ 19,24
6€ 23,08
7€ 26,93
8€ 30,78
9€ 34,63
10€ 35,15
11€ 38,66
12€ 42,18
13€ 45,70
14€ 49,21
15€ 52,72
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 9€ 3,85
10 - 24€ 3,52
25 - 49€ 3,32
50 - 99€ 3,09
100+€ 2,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Serija

SIPMOS®

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

115 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.31mm

Minimali darbinė temperatūra

-55 °C

Aukštis

4.57mm

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more