Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
40 V
Serija
StrongIRFET
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
366 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
15.87mm
Typical Gate Charge @ Vgs
460 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
20.7mm
Produkto aprašymas
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,37
€ 3,37 už 1 vnt. (be PVM)
€ 4,08
€ 4,08 už 1 vnt. (su PVM)
Standartas
1

€ 3,37
€ 3,37 už 1 vnt. (be PVM)
€ 4,08
€ 4,08 už 1 vnt. (su PVM)
Standartas
1

Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 9 | € 3,37 |
10 - 24 | € 3,18 |
25 - 49 | € 3,14 |
50 - 99 | € 2,94 |
100+ | € 2,71 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
40 V
Serija
StrongIRFET
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
366 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
15.87mm
Typical Gate Charge @ Vgs
460 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
20.7mm
Produkto aprašymas
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.