Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Pakuotės tipas
TO-220AB
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.54mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Plotis
4.69mm
Number of Elements per Chip
1
Aukštis
8.77mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Mexico
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,282
Each (In a Tube of 50) (be PVM)
€ 1,551
Each (In a Tube of 50) (su PVM)
50
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 1,282
Each (In a Tube of 50) (be PVM)
€ 1,551
Each (In a Tube of 50) (su PVM)
50
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 1,282 | € 64,12 |
100 - 200 | € 1,045 | € 52,25 |
250 - 450 | € 0,998 | € 49,88 |
500 - 950 | € 0,921 | € 46,03 |
1000+ | € 0,855 | € 42,75 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Pakuotės tipas
TO-220AB
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.54mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Plotis
4.69mm
Number of Elements per Chip
1
Aukštis
8.77mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Mexico
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.