Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.36mm
Plotis
15.95mm
Transistor Material
Si
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Aukštis
4.57mm
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 1,758
Each (In a Pack of 5) (be PVM)
€ 2,127
Each (In a Pack of 5) (su PVM)
Standartas
5
€ 1,758
Each (In a Pack of 5) (be PVM)
€ 2,127
Each (In a Pack of 5) (su PVM)
Standartas
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 120 | € 1,758 | € 8,79 |
125 - 495 | € 1,045 | € 5,22 |
500 - 2495 | € 0,926 | € 4,63 |
2500 - 4995 | € 0,796 | € 3,98 |
5000+ | € 0,781 | € 3,90 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.36mm
Plotis
15.95mm
Transistor Material
Si
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Aukštis
4.57mm
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.