Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1

RS kodas: 262-5867PGamintojas: InfineonGamintojo kodas: IPD038N06NF2SATMA1
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PG-TO252-3

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,792

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,958

Už kiekviena vnt. (tiekiama riteje) (su PVM)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 0,792

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,958

Už kiekviena vnt. (tiekiama riteje) (su PVM)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
10 - 90€ 0,792€ 7,92
100 - 240€ 0,752€ 7,52
250 - 490€ 0,721€ 7,21
500 - 990€ 0,69€ 6,90
1000+€ 0,436€ 4,36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PG-TO252-3

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more