Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Techniniai dokumentai
Specifikacijos
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Kaiščių skaičius
3
Tvirtinimo tipas
Surface Mount
Maximum Drain Source Voltage
60 V
Serija
Versaflo™ TR-619E
Maximum Continuous Drain Current
120 A
Markė
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€ 0,779
Each (In a Pack of 10) (be PVM)
€ 0,943
Each (In a Pack of 10) (su PVM)
Standartas
10
€ 0,779
Each (In a Pack of 10) (be PVM)
€ 0,943
Each (In a Pack of 10) (su PVM)
Standartas
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 0,779 | € 7,79 |
| 100 - 240 | € 0,739 | € 7,39 |
| 250 - 490 | € 0,709 | € 7,09 |
| 500 - 990 | € 0,677 | € 6,77 |
| 1000+ | € 0,428 | € 4,28 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Kaiščių skaičius
3
Tvirtinimo tipas
Surface Mount
Maximum Drain Source Voltage
60 V
Serija
Versaflo™ TR-619E
Maximum Continuous Drain Current
120 A
Markė
InfineonIdeate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products