N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
D2PAK-7
Serija
OptiMOS™ 5
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
9.45mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
4.2V
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 7,315
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 8,851
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
2
€ 7,315
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 8,851
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 2 - 18 | € 7,315 | € 14,63 |
| 20 - 98 | € 6,175 | € 12,35 |
| 100 - 198 | € 5,415 | € 10,83 |
| 200 - 498 | € 5,13 | € 10,26 |
| 500+ | € 4,56 | € 9,12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
D2PAK-7
Serija
OptiMOS™ 5
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
9.45mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
4.2V
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products