Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Serija
OptiMOS 5
Pakuotės tipas
TDSON
Serija
OptiMOS™ 5
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.9 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
6.1mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.35mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
1.1mm
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,826
Each (On a Reel of 5000) (be PVM)
€ 0,999
Each (On a Reel of 5000) (su PVM)
5000
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 0,826
Each (On a Reel of 5000) (be PVM)
€ 0,999
Each (On a Reel of 5000) (su PVM)
5000
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Serija
OptiMOS 5
Pakuotės tipas
TDSON
Serija
OptiMOS™ 5
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.9 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
6.1mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.35mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
1.1mm
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.