Infineon BCP55 NPN Bipolar Transistor, 1 A, 60 V, 4-Pin SOT-223
Techniniai dokumentai
Specifikacijos
Markė
InfineonTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
2 W
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
4
Number of Elements per Chip
1
Matmenys
1.6 x 6.5 x 3.5mm
Maksimali darbinė temperatūra
+150 °C
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P.O.A.
Standartas
5
P.O.A.
Standartas
5
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
InfineonTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
2 W
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Kaiščių skaičius
4
Number of Elements per Chip
1
Matmenys
1.6 x 6.5 x 3.5mm
Maksimali darbinė temperatūra
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products