Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.25mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Aukštis
0.8mm
Serija
OptiMOS
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,092
Each (On a Reel of 3000) (be PVM)
€ 0,111
Each (On a Reel of 3000) (su PVM)
3000
€ 0,092
Each (On a Reel of 3000) (be PVM)
€ 0,111
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
3000 - 3000 | € 0,092 | € 277,20 |
6000 - 12000 | € 0,088 | € 264,60 |
15000+ | € 0,084 | € 252,00 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.25mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Aukštis
0.8mm
Serija
OptiMOS
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.