N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002-7-F

RS kodas: 122-0588Gamintojas: DiodesZetexGamintojo kodas: 2N7002-7-F
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3mm

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,037

Each (On a Reel of 3000) (be PVM)

€ 0,045

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002-7-F
sticker-462

€ 0,037

Each (On a Reel of 3000) (be PVM)

€ 0,045

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002-7-F
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,037€ 111,15
6000 - 12000€ 0,037€ 111,15
15000 - 27000€ 0,034€ 102,60
30000+€ 0,032€ 96,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3mm

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more