Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SIHB28N60EF-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Serija
EF Series
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Plotis
9.65mm
Ilgis
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Aukštis
4.83mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 3 087,50
€ 3,088 Each (In a Bag of 1000) (be PVM)
€ 3 735,88
€ 3,736 Each (In a Bag of 1000) (su PVM)
1000
€ 3 087,50
€ 3,088 Each (In a Bag of 1000) (be PVM)
€ 3 735,88
€ 3,736 Each (In a Bag of 1000) (su PVM)
1000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Serija
EF Series
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Plotis
9.65mm
Ilgis
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Aukštis
4.83mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products