STMicroelectronics MDmesh DM2 N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh DM2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
20.15mm
Forward Diode Voltage
1.6V
Produkto aprašymas
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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€ 11,68
€ 11,68 už 1 vnt. (be PVM)
€ 14,13
€ 14,13 už 1 vnt. (su PVM)
Standartas
1
€ 11,68
€ 11,68 už 1 vnt. (be PVM)
€ 14,13
€ 14,13 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 11,68 |
| 5 - 9 | € 11,12 |
| 10 - 24 | € 9,98 |
| 25 - 49 | € 9,02 |
| 50+ | € 8,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh DM2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
20.15mm
Forward Diode Voltage
1.6V
Produkto aprašymas
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products