STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD16N60M2
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh M2
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Plotis
6.2mm
Ilgis
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Forward Diode Voltage
1.6V
Aukštis
2.4mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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€ 2 493,75
€ 0,998 Each (On a Reel of 2500) (be PVM)
€ 3 017,44
€ 1,207 Each (On a Reel of 2500) (su PVM)
2500
€ 2 493,75
€ 0,998 Each (On a Reel of 2500) (be PVM)
€ 3 017,44
€ 1,207 Each (On a Reel of 2500) (su PVM)
2500
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh M2
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Plotis
6.2mm
Ilgis
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Forward Diode Voltage
1.6V
Aukštis
2.4mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products