onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Serija
NTH
Pakuotės tipas
TO-247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 2 650,50
€ 5,89 Each (In a Tube of 450) (be PVM)
€ 3 207,10
€ 7,127 Each (In a Tube of 450) (su PVM)
450
€ 2 650,50
€ 5,89 Each (In a Tube of 450) (be PVM)
€ 3 207,10
€ 7,127 Each (In a Tube of 450) (su PVM)
450
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Serija
NTH
Pakuotės tipas
TO-247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products