Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

RS kodas: 232-0396Gamintojas: InfineonGamintojo kodas: IMW65R083M1HXKSA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Serija

CoolSiC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Sandėlio informacija laikinai nepasiekiama.

€ 176,70

€ 5,89 Each (In a Tube of 30) (be PVM)

€ 213,81

€ 7,127 Each (In a Tube of 30) (su PVM)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

30

Galima įsigyti kartotiną kiekį 30
30€ 176,70
60€ 336,30
90€ 504,45
120€ 672,60
150€ 783,75
180€ 940,50
210€ 1 097,25
240€ 1 254,00
270€ 1 410,75
300€ 1 567,50
330€ 1 724,25
360€ 1 881,00
390€ 2 037,75
420€ 2 194,50
450€ 2 351,25
sticker-462

€ 176,70

€ 5,89 Each (In a Tube of 30) (be PVM)

€ 213,81

€ 7,127 Each (In a Tube of 30) (su PVM)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Sandėlio informacija laikinai nepasiekiama.

30

Galima įsigyti kartotiną kiekį 30
30€ 176,70
60€ 336,30
90€ 504,45
120€ 672,60
150€ 783,75
180€ 940,50
210€ 1 097,25
240€ 1 254,00
270€ 1 410,75
300€ 1 567,50
330€ 1 724,25
360€ 1 881,00
390€ 2 037,75
420€ 2 194,50
450€ 2 351,25
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Vamzdelis
30 - 30€ 5,89€ 176,70
60 - 120€ 5,605€ 168,15
150+€ 5,225€ 156,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Serija

CoolSiC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more