Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

RS kodas: 188-5143PGamintojas: VishayGamintojo kodas: SUP60020E-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.65mm

Ilgis

10.51mm

Typical Gate Charge @ Vgs

151.2 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

9.01mm

Kilmės šalis

China

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€ 140,00

€ 2,80 Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 169,40

€ 3,388 Už kiekviena vnt. (tiekiama tuboje) (su PVM)

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 140,00

€ 2,80 Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 169,40

€ 3,388 Už kiekviena vnt. (tiekiama tuboje) (su PVM)

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Vamzdelis
50 - 120€ 2,80€ 14,00
125 - 245€ 2,60€ 13,00
250 - 495€ 2,45€ 12,25
500+€ 2,30€ 11,50

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.65mm

Ilgis

10.51mm

Typical Gate Charge @ Vgs

151.2 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

9.01mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more