STMicroelectronics N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-220FP STP6NK90ZFP

RS kodas: 103-1575Gamintojas: STMicroelectronicsGamintojo kodas: STP6NK90ZFP
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

900 V

Serija

MDmesh, SuperMESH

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.3mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 44,79

€ 0,896 Each (In a Tube of 50) (be PVM)

€ 54,20

€ 1,084 Each (In a Tube of 50) (su PVM)

STMicroelectronics N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-220FP STP6NK90ZFP
sticker-462

€ 44,79

€ 0,896 Each (In a Tube of 50) (be PVM)

€ 54,20

€ 1,084 Each (In a Tube of 50) (su PVM)

STMicroelectronics N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-220FP STP6NK90ZFP
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

900 V

Serija

MDmesh, SuperMESH

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.3mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more