N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STMicroelectronics STP60NF06
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Serija
STripFET II
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
49 nC @ 10 V
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 27,50
€ 1,10 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 33,28
€ 1,331 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
25
€ 27,50
€ 1,10 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 33,28
€ 1,331 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
25
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 25 - 95 | € 1,10 | € 5,50 |
| 100 - 245 | € 0,858 | € 4,29 |
| 250 - 495 | € 0,714 | € 3,57 |
| 500+ | € 0,672 | € 3,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Serija
STripFET II
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
49 nC @ 10 V
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products