Semikron Danfoss SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
Techniniai dokumentai
Specifikacijos
Markė
Semikron DanfossMaximum Continuous Collector Current
260 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Pakuotės tipas
SEMITRANS3
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 279,30
€ 279,30 už 1 vnt. (be PVM)
€ 337,95
€ 337,95 už 1 vnt. (su PVM)
1
€ 279,30
€ 279,30 už 1 vnt. (be PVM)
€ 337,95
€ 337,95 už 1 vnt. (su PVM)
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 279,30 |
| 2 - 4 | € 246,05 |
| 5 - 9 | € 223,25 |
| 10 - 19 | € 209,95 |
| 20+ | € 195,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Semikron DanfossMaximum Continuous Collector Current
260 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Pakuotės tipas
SEMITRANS3
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products