onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C

RS kodas: 181-1861Gamintojas: onsemiGamintojo kodas: FDPF2D3N10C
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

222 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.9mm

Ilgis

10.36mm

Typical Gate Charge @ Vgs

108 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

16.07mm

Kilmės šalis

China

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€ 2 300,00

€ 2,30 Each (In a Tube of 1000) (be PVM)

€ 2 783,00

€ 2,783 Each (In a Tube of 1000) (su PVM)

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C
sticker-462

€ 2 300,00

€ 2,30 Each (In a Tube of 1000) (be PVM)

€ 2 783,00

€ 2,783 Each (In a Tube of 1000) (su PVM)

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

222 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220F

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.9mm

Ilgis

10.36mm

Typical Gate Charge @ Vgs

108 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

16.07mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more