IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
250 V
Serija
Trench
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
694 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5.3mm
Ilgis
16.26mm
Typical Gate Charge @ Vgs
157 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
21.46mm
Produkto aprašymas
N-Channel Trench-Gate Power MOSFET, IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 156,75
€ 5,225 Each (In a Tube of 30) (be PVM)
€ 189,67
€ 6,322 Each (In a Tube of 30) (su PVM)
30
€ 156,75
€ 5,225 Each (In a Tube of 30) (be PVM)
€ 189,67
€ 6,322 Each (In a Tube of 30) (su PVM)
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
250 V
Serija
Trench
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
694 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5.3mm
Ilgis
16.26mm
Typical Gate Charge @ Vgs
157 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
21.46mm
Produkto aprašymas
N-Channel Trench-Gate Power MOSFET, IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products