Techniniai dokumentai
Specifikacijos
Markė
VishayTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Kaiščių skaičius
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Kilmės šalis
China
Produkto aprašymas
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 32,06
€ 1,282 Each (In a Tube of 25) (be PVM)
€ 38,79
€ 1,551 Each (In a Tube of 25) (su PVM)
25

€ 32,06
€ 1,282 Each (In a Tube of 25) (be PVM)
€ 38,79
€ 1,551 Each (In a Tube of 25) (su PVM)
25

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Techniniai dokumentai
Specifikacijos
Markė
VishayTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Kaiščių skaičius
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Kilmės šalis
China
Produkto aprašymas
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.