Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

RS kodas: 188-4915Gamintojas: VishayGamintojo kodas: SQJ208EP-T1_GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Pakuotės tipas

PowerPAK SO-8L Dual

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Plotis

4.47mm

Ilgis

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.01mm

Automotive Standard

AEC-Q101

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€ 2 014,95

€ 0,672 Each (On a Reel of 3000) (be PVM)

€ 2 438,09

€ 0,813 Each (On a Reel of 3000) (su PVM)

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
sticker-462

€ 2 014,95

€ 0,672 Each (On a Reel of 3000) (be PVM)

€ 2 438,09

€ 0,813 Each (On a Reel of 3000) (su PVM)

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Pakuotės tipas

PowerPAK SO-8L Dual

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Plotis

4.47mm

Ilgis

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.01mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more