Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
20 A, 60 A
Maximum Drain Source Voltage
40 (Channel 1) V, 40 (Channel 2) V
Pakuotės tipas
PowerPAK SO-8L Dual
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage
1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation
27 W, 48 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Plotis
4.47mm
Ilgis
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
1.01mm
Automotive Standard
AEC-Q101
€ 2 014,95
€ 0,672 Each (On a Reel of 3000) (be PVM)
€ 2 438,09
€ 0,813 Each (On a Reel of 3000) (su PVM)
3000

€ 2 014,95
€ 0,672 Each (On a Reel of 3000) (be PVM)
€ 2 438,09
€ 0,813 Each (On a Reel of 3000) (su PVM)
3000

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Patikrinkite dar kartą.
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
20 A, 60 A
Maximum Drain Source Voltage
40 (Channel 1) V, 40 (Channel 2) V
Pakuotės tipas
PowerPAK SO-8L Dual
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage
1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation
27 W, 48 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Plotis
4.47mm
Ilgis
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
1.01mm
Automotive Standard
AEC-Q101