Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK 1212-8 Dual
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.167 O, 0.251 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 V, 2.5 V
Number of Elements per Chip
2
Transistor Material
Si
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€ 1 037,40
€ 0,346 Each (On a Reel of 3000) (be PVM)
€ 1 255,25
€ 0,419 Each (On a Reel of 3000) (su PVM)
3000
€ 1 037,40
€ 0,346 Each (On a Reel of 3000) (be PVM)
€ 1 255,25
€ 0,419 Each (On a Reel of 3000) (su PVM)
3000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK 1212-8 Dual
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.167 O, 0.251 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 V, 2.5 V
Number of Elements per Chip
2
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products