Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET SI5515CDC-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Serija
TrenchFET
Pakuotės tipas
1206 ChipFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.05 O,0.156 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Number of Elements per Chip
2
Kilmės šalis
China
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€ 1 026,00
€ 0,342 Each (On a Reel of 3000) (be PVM)
€ 1 241,46
€ 0,414 Each (On a Reel of 3000) (su PVM)
3000
€ 1 026,00
€ 0,342 Each (On a Reel of 3000) (be PVM)
€ 1 241,46
€ 0,414 Each (On a Reel of 3000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
3000
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Serija
TrenchFET
Pakuotės tipas
1206 ChipFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.05 O,0.156 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Number of Elements per Chip
2
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products