Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3

RS kodas: 787-9229PGamintojas: VishayGamintojo kodas: SI2328DS-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Plotis

1.4mm

Typical Gate Charge @ Vgs

1.45 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 67,50

€ 0,675 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 81,68

€ 0,817 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 67,50

€ 0,675 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 81,68

€ 0,817 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Ritė
100 - 240€ 0,675€ 6,75
250 - 490€ 0,605€ 6,05
500 - 990€ 0,391€ 3,91
1000+€ 0,341€ 3,41

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Plotis

1.4mm

Typical Gate Charge @ Vgs

1.45 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more