Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3

RS kodas: 146-1425Gamintojas: VishayGamintojo kodas: SI2303CDS-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

1.4mm

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V, 4 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 564,30

€ 0,188 Each (On a Reel of 3000) (be PVM)

€ 682,80

€ 0,228 Each (On a Reel of 3000) (su PVM)

Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3
sticker-462

€ 564,30

€ 0,188 Each (On a Reel of 3000) (be PVM)

€ 682,80

€ 0,228 Each (On a Reel of 3000) (su PVM)

Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

1.4mm

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V, 4 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more