Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640SPBF

RS kodas: 541-2464PGamintojas: VishayGamintojo kodas: IRF640SPBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Plotis

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.67mm

Maksimali darbinė temperatūra

+175 °C

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 19,00

€ 1,90 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 22,99

€ 2,30 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640SPBF
Pasirinkite pakuotės tipą
sticker-462

€ 19,00

€ 1,90 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 22,99

€ 2,30 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640SPBF

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kaina
10 - 49€ 1,90
50 - 99€ 1,75
100 - 249€ 1,65
250+€ 1,35

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Plotis

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.67mm

Maksimali darbinė temperatūra

+175 °C

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more