Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Si7190ADP-T1-RE3
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Plotis
5mm
Ilgis
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
1.07mm
Kilmės šalis
China
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€ 8,55
€ 1,71 Each (In a Pack of 5) (be PVM)
€ 10,35
€ 2,069 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 8,55
€ 1,71 Each (In a Pack of 5) (be PVM)
€ 10,35
€ 2,069 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,71 | € 8,55 |
| 50 - 95 | € 1,425 | € 7,12 |
| 100 - 495 | € 1,092 | € 5,46 |
| 500 - 995 | € 0,998 | € 4,99 |
| 1000+ | € 0,846 | € 4,23 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Plotis
5mm
Ilgis
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
1.07mm
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products